BCM846S

NPN Silicon AF Transistor Array Precision matched transistor pair: ∆IC ≤ 10% For current mirror applications Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM856S BCM846S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 BCM846S 4 5 6 3 2 1 C1 B2 E2 654 TR2 TR1 123 E1 B1 C2 EHA07178 Type BCM846S Marking Pin Configuration Package 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Total power dissipationTS = 115 °C Junction temperature Storage temperature Symbol VCEO VCES VCBO VEBO IC ICM Ptot Tj Tstg Value 65 80 80 6 100 200 250 150 -65 ... 150 Unit V mA mW °C 1 2011-10-05 BCM846S Thermal Resistance Parameter Junction - soldering point1) Sym...