BCP1213
Elektronische Bauelemente PNP Epitaxial Planar Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
The BCP1213 www.DataSheet4U.net is designed for using in power amplifier applications or power switching applications.
SOT-89
A E C
MARKING
Type Name
B
D F G H K
REF. G H J K L
NY
hFE Ranking
REF. A B C D E F
Millimeter J Min. Max. 4.40 4.60 4.05 4.25 1.40 1.60 2.40 2.60 1.50 1.70 0.89 1.20
L
Millimeter Min. Max. 1.50 REF. 3.00 REF. 0.40 0.52.
Epitaxial Planar Transistor
BCP1213
Elektronische Bauelemente PNP Epitaxial Planar Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
The BCP1213 www.DataSheet4U.net is designed for using in power amplifier applications or power switching applications.
SOT-89
A E C
MARKING
Type Name
B
D F G H K
REF. G H J K L
NY
hFE Ranking
REF. A B C D E F
Millimeter J Min. Max. 4.40 4.60 4.05 4.25 1.40 1.60 2.40 2.60 1.50 1.70 0.89 1.20
L
Millimeter Min. Max. 1.50 REF. 3.00 REF. 0.40 0.52 0.35 0.41
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction & Storage Temperature
Symbol
VCBO VCEO VEBO IC IB PC (Note 1) TJ, TSTG
Ratings
-50 -50 -5 -2 -0.4 500 1000 150, -55~150
Unit
V V V A A mW mW °C
2
Note 1: Mounted on ceramic substrate (250mm x0.8t)
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain. Base-emitter voltage Collector-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time
Symbol
V(BR)CEO ICBO IEBO hFE(1) hFE(2) VBE(sat) VCE(sat) fT COB tON tSTG tF
Min.
-50 70 20 -
Max.
-100 -100 240 -1.2 -0.5 120 TYP. 40 0.1 1.0 0.1
Unit
V nA nA
Test Conditions
IC = -10 mA, IB = 0 VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -2.0 A .