BCP195

PNP Silicon Planar Medium Power Transistor RoHS Compliant Product BCP195 SOT-89 Description www.DataSheet4U.net The BCP195 is designed for medium power amplifier applications. 1 2 3 1.BASE Features * 1Amp Continuous Current * -60V VCEO * Complementary TO BCP194 2.COLLECTOR 3.EMITTER REF. A B C D E F Min. 4.4 4.05 1.50 1.30 2.40 0.89 Millimeter Max. 4.6 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Millimeter Absolute Maximum Ratings at Ta=25 C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Power Dissipation Operating Junction and Storage Temperature o o Parameter Symbol VCBO VCEO VEBO IC IC IB PD TJ,TSTG -80 -60 -5 -1 -2 -200 1 +150,-55 ~ +150 Value Unit V V V A A mA W o C Electrical Characteristics (Ta=25 C, unless otherwise stated) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Saturation Cut-off Current Collector-Emitter Saturation Voltage Output Capacitance Base-Emitter Voltage DC Current Gain Transition Frequency Parameter Symbol BVCBO BV CEO BVEBO ICBO IEBO ICES VCE(sat)1 VCE(sat) 2 Cob VBE(sat) VBE(on) hFE1 hFE2 hFE3 hFE4 fT Min. -80 -60 -5 100 100 80 15 150 Typ. Max. -100 -100 -100 -0.3 -0.6 10 -1.2 -1 300 - Unit V V V nA nA nA V V pF V V MHz IC=-100µA, IE=0 IC=-10mA, IB=0 ...