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BCP52T Datasheet

Part Number BCP52T
Manufacturers nexperia
Logo nexperia
Description 1A PNP medium power transistors
Datasheet BCP52T DatasheetBCP52T Datasheet (PDF)

BCP52T series 60 V, 1 A PNP medium power transistors Rev. 1 — 29 April 2019 Product data sheet 1. Product profile 1.1. General description PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BCP52T SOT223 BCP52-10T BCP52-16T JEDEC SC-73 NPN comlement BCP55T BCP55-10T BCP55-16T 1.2. Features and benefits • High collector current capability IC and ICM • Three current gain sel.

  BCP52T   BCP52T






Part Number BCP52TA
Manufacturers Diodes
Logo Diodes
Description PNP MEDIUM POWER TRANSISTORS
Datasheet BCP52T DatasheetBCP52TA Datasheet (PDF)

Features  BVCEO > -45V, -60V & -80V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(sat) < -500mV @ -0.5A  Gain Groups 10 and 16  Complementary NPN Types: BCP54, 55 and 56  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) SOT223 BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN S.

  BCP52T   BCP52T







Part Number BCP5216TA
Manufacturers Diodes
Logo Diodes
Description PNP MEDIUM POWER TRANSISTORS
Datasheet BCP52T DatasheetBCP5216TA Datasheet (PDF)

Features  BVCEO > -45V, -60V & -80V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(sat) < -500mV @ -0.5A  Gain Groups 10 and 16  Complementary NPN Types: BCP54, 55 and 56  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) SOT223 BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN S.

  BCP52T   BCP52T







Part Number BCP5210TA
Manufacturers Diodes
Logo Diodes
Description PNP MEDIUM POWER TRANSISTORS
Datasheet BCP52T DatasheetBCP5210TA Datasheet (PDF)

Features  BVCEO > -45V, -60V & -80V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(sat) < -500mV @ -0.5A  Gain Groups 10 and 16  Complementary NPN Types: BCP54, 55 and 56  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) SOT223 BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN S.

  BCP52T   BCP52T







Part Number BCP52-16T
Manufacturers nexperia
Logo nexperia
Description 1A PNP medium power transistors
Datasheet BCP52T DatasheetBCP52-16T Datasheet (PDF)

BCP52T series 60 V, 1 A PNP medium power transistors Rev. 1 — 29 April 2019 Product data sheet 1. Product profile 1.1. General description PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BCP52T SOT223 BCP52-10T BCP52-16T JEDEC SC-73 NPN comlement BCP55T BCP55-10T BCP55-16T 1.2. Features and benefits • High collector current capability IC and ICM • Three current gain sel.

  BCP52T   BCP52T







1A PNP medium power transistors

BCP52T series 60 V, 1 A PNP medium power transistors Rev. 1 — 29 April 2019 Product data sheet 1. Product profile 1.1. General description PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BCP52T SOT223 BCP52-10T BCP52-16T JEDEC SC-73 NPN comlement BCP55T BCP55-10T BCP55-16T 1.2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified 1.3. Applications • Linear voltage regulators • MOSFET drivers • High-side switches • Power management • Amplifiers 1.4. Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current ICM peak collector current single pulse; tp ≤ 1 ms Min Typ Max Unit - - -60 V - - -1 A - - -2 A Nexperia Symbol hFE Parameter DC current gain BCP52T BCP52-10T BCP52-16T [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 Conditions VCE = -2 V; IC = -150 mA 2. Pinning information Table 3. Pinning Pin 1 2 3 4 Symbol B C E C Description base collector emitter collector BCP52T series 60 V, 1 A PNP medium power transistors Min Typ Max Unit [1] 63 [1] 63 [1] 100 - 250 160 250 Simplified outline 4 123 Graphic symbol C B E sym132 3. Ordering information Table 4. Ordering information Type number Package Name BCP52T SC.


2019-07-20 : BSR16    BC807-16LW    BC807-25L    BC807-16L    BC807LW    BC807DS    BC817RAPN    PMSTA05    PMSTA55    PMSTA56   


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