DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP51; BCP52; BCP53 PNP medium power transistors
Product spe...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP51; BCP52; BCP53 PNP medium power transistors
Product specification Supersedes data of 1997 Apr 08 1999 Apr 08
Philips Semiconductors
Product specification
PNP medium power transistors
FEATURES High current (max. 1 A) Low
voltage (max. 80 V) Medium power (max. 1.3 W). APPLICATIONS Audio, telephony and automotive applications Thick and thin-film circuits. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56.
1 Top view
handbook, halfpage
BCP51; BCP52; BCP53
PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION
4
2, 4 1 3
2 3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCP51 BCP52 BCP53 VCEO collector-emitter
voltage BCP51 BCP52 BCP53 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − − −65 − −65 −45 −60 −80 −5 −1 −1.5 −0.2 1.3 +150 150 +150 V V V V A A A W °C °C °C PARAMETER collector-base voltag...