BCP53 Series
PNP Silicon Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio ampli...
BCP53 Series
PNP Silicon Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
High Current NPN Complement is BCP56 The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
Device Marking:
BCP53T1G = AH BCP53−10T1G = AH−10 BCP53−16T1G = AH−16
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter
Voltage
Collector−Base
Voltage
Emitter−Base
Voltage
Collector Current
Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C
VCEO VCBO VEBO
IC PD
−80 −100 −5.0 1.5
1.5 12
Vdc Vdc Vdc Adc
W mW/°C
Operating and Storage Temperature Range
TJ, Tstg −65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
THERMAL CHARACTERISTICS
C...