BCP55-10T

BCP55T series 60 V, 1 A NPN medium power transistors Rev. 1 — 29 April 2019 Product data sheet 1. Product profile 1.1. General description NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BCP55T SOT223 BCP55-10T BCP55-16T JEDEC SC-73 NPN comlement BCP52T BCP52-10T BCP52-16T 1.2. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified 1.3. Applications Linear voltage regulators MOSFET drivers High-side switches Power management Amplifiers 1.4. Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current ICM peak collector current single pulse; tp ≤ 1 ms Min Typ Max Unit - - 60 V - - 1A - - 2A Nexperia Symbol hFE Parameter DC current gain BCP55T BCP55-10T BCP55-16T [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 Conditions VCE = 2 V; IC = 150 mA 2. Pinning information Table 3. Pinning Pin 1 2 3 4 Symbol B C E C Description base collector emitter collector BCP55T series 60 V, 1 A NPN medium power transistors Min Typ Max Unit [1] 63 [1] 63 [1] 100 - 250 160 250 Simplified outline 4 123 Graphic symbol C B E sym123 3. Ordering information Table 4. Ordering information Type number Package Name BCP55T SC-73 BC...