Elektronische Bauelemente
BCP5551
0.6A , 180V NPN Silicon Medium Power Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage Low current High voltage
MARKING
1G6
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size 7 inch
SOT-89
4
123 A EC
B F
G H
J
D
K L
REF.
A B C D E F
Millimeter
Min.
4.40 3.94 1.40
2.25
Max.
4.60 4.25 1.60
2.60
1.50 1.85
0.89 1.20
REF.
G H J K L
Millimeter
Min.
0.40 .
NPN Silicon Medium Power Transistor
Elektronische Bauelemente
BCP5551
0.6A , 180V NPN Silicon Medium Power Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage Low current High voltage
MARKING
1G6
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size 7 inch
SOT-89
4
123 A EC
B F
G H
J
D
K L
REF.
A B C D E F
Millimeter
Min.
4.40 3.94 1.40
2.25
Max.
4.60 4.25 1.60
2.60
1.50 1.85
0.89 1.20
REF.
G H J K L
Millimeter
Min.
0.40 1.50 3.00
0.32
Max.
0.58 TYP TYP
0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current-Continuous
IC
Collector Power Dissipation
PD
Junction and Storage Temperature
TJ, TSTG
Rating
180 160
6 600 0.5 150, -55~150
Unit
V V V mA W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-base breakdown voltage Collector-emitter breakdown
V(BR)CBO V(BR)CEO
180 160
-
-
Emitter-base breakdown voltage
V(BR)EBO
6
-
-
Collector cut-off current
ICBO
- - 50
Emitter cut-off current
IEBO - - 50
80 - -
DC current gain
hFE 80 - 300
30 - -
Collector-emitter saturation voltage
VCE(sat)1 VCE(sat)2
-
- 0.15 - 0.2
Base-emitter saturation voltage
VBE(sat)1 VBE(sat)2
-
-1 -1
Transition frequency
fT - 100 -
Collector capacitance
Cob - 6 -
Noise figure
NF - 8 -.