BCP56L3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 1/7 BCP56L3 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low VCE(SAT) Complement to BCP53L3 Pb-free package Symbol BCP56L3 Outline SOT-223 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation @TC=25℃ Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 100 80 5 1 1.5 2 -55~+150 -55~+150 Unit V V V A A W °C °C BCP56L3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 100 80 5 100 100 45 Typ. 0.15 125 Max. 100 100 0.3 0.6 1.2 1.0 400 10 Unit V V V nA nA V V V V MHz pF Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 2/7 Test Conditions IC=100μA IC=10mA IE=10μA VCB=80V VEB=5V IC=500mA, IB=50mA IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=500mA VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Cl...