BCP69T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCP69T1/D PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. High Current: IC = –1.0 Amp The SOT-223 Package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel. NPN Complement is BCP68 COLLECTOR 2,4 BCP69T1 Motorola Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 4 1 2 3 BASE 1 EMITTER 3 CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value – 25 – 20 – 5.0 –1.0 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C DEVICE MARKING CE THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625″ f...