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BCR5PM-14LJ

INCHANGE

Thyristor

isc Thyristors INCHANGE Semiconductor BCR5PM-14LJ DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High ...


INCHANGE

BCR5PM-14LJ

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Description
isc Thyristors INCHANGE Semiconductor BCR5PM-14LJ DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage Tj=150℃ 700 V VRRM Repetitive peak reverse voltage 700 V IT(AV) Average on-state current 5 A ITSM Surge non-repetitive on-state current 60HZ 50 A PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature 0.5 W -40~150 ℃ -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BCR5PM-14LJ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=7A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.8 V 30 30 mA 30 1.5 V 4.9 ℃/W NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applica...




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