BCU83-SMD

BCU83–SMD MECHANICAL DATA Dimensions in mm NPN EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 Ideal for high current driver applications requiring low loss devices 4 .2 5 m a x . 2 .5 FEATURES LOW VCE(SAT) HIGH CURRENT HIGH ENERGY RATING 0 .4 0 0 .5 0 1 .5 3 .0 - + * 1 .0 0 .4 0 APPLICATIONS ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING SOT89 EFFICIENT LOW LOSS DEVICES ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC IC(PK) Ptot Tstg Tj Collector – Emitter voltage Collector – Base voltage Emitter – Base voltage Collector current Peak Collector current Total Dissipation at Tcase = 25°C Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk 20V 60V 6V 5A 8A 0.9W –55 to 150°C 150°C Prelim. 1/94 Magnatec. BCU83–SMD ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) ICBO IEBO VCE(sat)* VBE(sat)* hFE* fT Cob Parameter Collector cut–off current Emitter cut–off current Collector – Emitter saturation voltage Base – Emitter saturation voltage DC current gain Transition frequency Output capacitance Test Conditions VCB = 50V IE = 0 VEB = 5V IC = 3A IC = 3A VCE = 2V VCE = 2V VCE = 10V VCB = 10V IC = 0 IB = 60mA IB = 60mA IC = 0.5A IC = 3A IC = 50mA f = 1MHz 0.6 100 75 120 45 Min. Typ. Max. 1.0 1.0 0.5 1.5 560 Unit. mA m A V V — MHz pF * Pulse test tp = 300ms , d £ 2% Magnatec. Telephone...