DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BCV29; BCV49 NPN Darlington transistors
Product specification...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BCV29; BCV49 NPN Darlington transistors
Product specification Supersedes data of 1997 Apr 21 1999 Apr 08
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES High current (max. 500 mA) Low
voltage (max. 60 V) High DC current gain (min. 20000). APPLICATIONS Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48.
1 2 3
handbook, halfpage
BCV29; BCV49
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
3
2
TR1 TR2 1
MAM300
MARKING
Bottom view
TYPE NUMBER BCV29 BCV49
MARKING CODE EF EG Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV29 BCV49 VCES collector-emitter
voltage BCV29 BCV49 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open collector VBE = 0 − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 30 60 10 500 1 200 1.3 +150 150 +150 V V V mA A mA W °C °C °C PARAMETER collector-base
voltage CO...