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BCV47 Datasheet

Part Number BCV47
Manufacturers SEMTECH
Logo SEMTECH
Description NPN Darlington Transistors
Datasheet BCV47 DatasheetBCV47 Datasheet (PDF)

BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA Collector Cutoff Current at VCB = 30 V at VCB = .

  BCV47   BCV47






Part Number BCV47
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description NPN SILICON DARLINGTON TRANSISTOR
Datasheet BCV47 DatasheetBCV47 Datasheet (PDF)

BCV47 NPN SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. Marking Code is FG. SOT-23 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dis.

  BCV47   BCV47







Part Number BCV47
Manufacturers NXP
Logo NXP
Description NPN Darlington transistors
Datasheet BCV47 DatasheetBCV47 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV27; BCV47 NPN Darlington transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • Medium current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. MARKING 1 2 .

  BCV47   BCV47







Part Number BCV47
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Darlington Transistors
Datasheet BCV47 DatasheetBCV47 Datasheet (PDF)

NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV26, BCV46 (PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCV27, BCV47 32 1 Type BCV27 BCV47 Marking FFs FGs Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C Package SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage BCV27 BCV47 Symbol VCEO Value 30 60 Unit V Collector-base voltage BCV27 BCV47 VCBO Emitter-base voltage.

  BCV47   BCV47







Part Number BCV47
Manufacturers JCST
Logo JCST
Description NPN Transistor
Datasheet BCV47 DatasheetBCV47 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCV47 TRANSISTOR (NPN) SOT–23 FEATURES  High Collector Current  High Current Gain MARKING:FG MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 10 IC Collector Current 500 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 416 Tj Junction Tempe.

  BCV47   BCV47







Part Number BCV47
Manufacturers Diodes
Logo Diodes
Description NPN DARLINGTON TRANSISTOR
Datasheet BCV47 DatasheetBCV47 Datasheet (PDF)

Features • BVCEO > 60V • Darlington Transistor hFE > 10k @ 100mA for high gain • IC = 500mA high Continuous Collector Current • Complementary Darlington PNP Type: BCV46 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP capable (Note 4) A Product Line of Diodes Incorporated BCV47 60V NPN DARLINGTON TRANSISTOR IN SOT23 Mechanical Data • Case: SOT23 • Case Material: molded plas.

  BCV47   BCV47







NPN Darlington Transistors

BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA Collector Cutoff Current at VCB = 30 V at VCB = 60 V Emitter Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On-state Voltage at IC = 10 mA, VCE = 5 V Transition Frequency at VCE = 5 V, IC = 30 mA, f = 100 MHz SOT-23 Plastic Package BCV27 BCV47 BCV27 BCV47 Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj TS Value 40 80 30 60 10 500 800 100 200 150 - 65 to + 150 Unit V V V mA mA mA mW OC OC Symbol Min. BCV27 BCV47 BCV27 BCV47 BCV27 BCV47 hFE 4000 hFE 2000 hFE 10000 hFE 4000 hFE 20000 hFE 10000 BCV27 BCV47 ICBO BCV27 BCV47 BCV27 BCV47 IEBO V(BR)CBO V(BR)CEO V(BR)EBO - - 40 80 30 60 10 VCE(sat) - VBE(sat) - VBE(on) - fT - Typ. - - - - - - - 220 Max. - 100 100 100 - - 1 1.5 1.4 - Unit - nA nA V V V V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech Intern.


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