DatasheetsPDF.com

BCW69LT1 Datasheet

Part Number BCW69LT1
Manufacturers Yiguang Electronic
Logo Yiguang Electronic
Description PNP Transistor
Datasheet BCW69LT1 DatasheetBCW69LT1 Datasheet (PDF)

SEMICONDUCTOR BCW69/70LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Package:SOT-23 Collector-Base Voltage Vcbo -50 V Collector-Emitter Voltage Vceo -45 V Emitter-Base Voltage Vebo -5.0 V Collector Current Ic -100 mA Peak Collector Current Peak Emitter Current Power Dissipation at TSB=50 (Note1) Junction Temperature.

  BCW69LT1   BCW69LT1






Part Number BCW69LT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description General Purpose Transistors
Datasheet BCW69LT1 DatasheetBCW69LT1 Datasheet (PDF)

BCW69LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VCEO VEBO IC Value −45 −5.0 −100 Unit Vdc .

  BCW69LT1   BCW69LT1







Part Number BCW69LT1
Manufacturers Motorola Inc
Logo Motorola  Inc
Description General Purpose Transistors
Datasheet BCW69LT1 DatasheetBCW69LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW69LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW69LT1 BCW70LT1 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –45 –5.0 –100 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1).

  BCW69LT1   BCW69LT1







PNP Transistor

SEMICONDUCTOR BCW69/70LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Package:SOT-23 Collector-Base Voltage Vcbo -50 V Collector-Emitter Voltage Vceo -45 V Emitter-Base Voltage Vebo -5.0 V Collector Current Ic -100 mA Peak Collector Current Peak Emitter Current Power Dissipation at TSB=50 (Note1) Junction Temperature ICM -200 mA IEM -200 mA PD 310 mW Tj 150 PIN: STYLE 123 Storage Temperature Tstg -65-150 ELECTRICAL CHARACTERISTICS at Ta=25 NO.1 BEC Characteristic Symbol Min Typ Max Unit Test Conditions DC Current Gain Current Gain Group A (Note2) BCW69 Current Gain Group A BCW70 Hfe 120 180 260 215 500 Vce=-5.0V Ic= -2.0mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Vce(sat) Vbe(sat) Vbe -600 -90 -250 -700 -900 -660 Collector-Emitter Cutoff.


2017-06-07 : 6DI20MS-050    MBR340    MBR360    MBR350    MBR330    MBR320    MBR320    MBR735    MBR745    MBR745   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)