SEMICONDUCTOR
BCW69/70LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSI...
SEMICONDUCTOR
BCW69/70LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
Package:SOT-23
Collector-Base
Voltage
Vcbo
-50
V
Collector-Emitter
Voltage
Vceo
-45
V
Emitter-Base
Voltage
Vebo
-5.0
V
Collector Current
Ic -100 mA
Peak Collector Current Peak Emitter Current Power Dissipation at TSB=50 (Note1) Junction Temperature
ICM -200 mA IEM -200 mA PD 310 mW
Tj 150
PIN: STYLE
123
Storage Temperature
Tstg -65-150
ELECTRICAL CHARACTERISTICS at Ta=25
NO.1
BEC
Characteristic
Symbol Min Typ Max Unit
Test Conditions
DC Current Gain Current Gain Group A
(Note2)
BCW69
Current Gain Group A
BCW70
Hfe 120 180 260 215 500
Vce=-5.0V Ic= -2.0mA
Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Base-Emitter
Voltage
Vce(sat) Vbe(sat)
Vbe -600
-90 -250 -700 -900 -660
Collector-Emitter Cutoff...