BCW89

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW89 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 11 1999 Apr 15 Philips Semiconductors Product specification PNP general purpose transistor FEATURES Low current (max. 100 mA) Low voltage (max. 60 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. 1 handbook, halfpage BCW89 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 MARKING TYPE NUMBER BCW89 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. MARKING CODE(1) H3∗ Top view 2 1 2 MAM256 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = −2 mA open collector − − − − − − − −65 − −65 MIN. MAX. −80 −60 −5 −100 −200 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h...