PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
PNP Silicon AF Switching Transistor
For general AF applications q High breakdown voltage q Low collector-emitter saturat...
PNP Silicon AF Switching Transistor
For general AF applications q High breakdown
voltage q Low collector-emitter saturation
voltage q Complementary type: BCX 12 (NPN)
q 2 1 3
BCX 13
Type BCX 13
Marking BCX 13
Ordering Code Q62702-C26
Pin Configuration 1 2 3 C B E
Package1) TO-92
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 125 125 5 800 1 100 200 625 150 – 65 … + 150
Unit V
mA A mA mW ˚C
200 135
K/W
1) 2)
For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BCX 13
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown
voltage IC = 10 mA, IB = 0 Collector-base breakdown
voltage IC = 100 µA, IB = 0 Emitter-base breakdown
voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V Collector-emitter saturation
voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation v...