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BCX56 Transistors Datasheet PDFNPN Silicon AF Transistors NPN Silicon AF Transistors |
 
 
 
Part Number | BCX56 |
---|---|
Description | NPN Silicon AF Transistors |
Feature | NPN Silicon AF Transistors
FEATURES
ï ¬ For AF driver and output stages ï¬ H igh collector current ï¬ Low collector -emitter saturation voltage
Pb
Lead-fr ee
ï¬ Complementary types: BCX51…BC X53(PNP)
Production specification
BCX5 4/BCX55/BCX56
ORDERING INFORMATION
Ty pe No. Marking SOT-89 Package Code B CX54 BCX54-10 BCX54-16 BCX55 BA BC BD BE BCX55-10 BCX55-16 BCX56 BCX56-10 B G BM BH BK BCX56-16 BL MAXIMUM RATIN G @ Ta=25℃ unless otherwise specified SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SO T-89 SOT-89 SOT-89 SOT-89 Symbol Param eter Value VCBO VCEO VEBO IC ICM IB I BM Ptot Collector-Base Vo . |
Manufacture | GME |
Datasheet |
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Part Number | BCX56 |
---|---|
Description | 1A NPN medium power transistors |
Feature | BCP56; BCX56; BC56PA
80 V, 1 A NPN medi um power transistors
Rev. 9 — 25 Octo ber 2011 Product data sheet 1. Produc t profile 1. 1 General description NPN medium power transistor series in Surfa ce-Mounted Device (SMD) plastic package s. Table 1. Product overview Type num ber[1] Package Nexperia BCP56 SOT22 3 BCX56 SOT89 BC56PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all avail able selection groups. JEDEC TO-243 - PNP complement BCP53 BCX53 BC53PA 1. 2 Features and benefits ï® High current ï® Three current gain selections ï® High power dissipation capability ï® E xposed heatsink for exce . |
Manufacture | nexperia |
Datasheet |
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Part Number | BCX56 |
---|---|
Description | NPN Silicon AF Transistor |
Feature | NPN Silicon AF Transistor
Features:
•   For AF driver and output stages •   High collector current •  Low c ollector-emitter saturation voltage •   Complementary types:BCX51/BCX52/BCX 53 Maximum Ratings Parameter Collector - Base Voltage - BCX54 - BCX55 - BCX56 Collector - Emitter Voltage - BCX54 - BCX55 - BCX56 Emitter - Base Voltage C ollector Current - Continuous Collector Current - Peak Base Current Peak Base Current Total Power Dissipation, TS=130 °C Junction and Storage Temperature C ollector 3 1 Base 2 Emitter Pin Configu ration: 1. Base 2. Emitter 3. Collector Symbol VCBO VCEO Vebo IC ICM . |
Manufacture | Multicomp |
Datasheet |
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