BCX70JLT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCX70GLT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc BCX70GLT1 BCX70JLT1 BCX70KLT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter – Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc mAdc nAdc 45 5.0 — — Vdc Vdc   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FET...