BD131

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistor FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications. DESCRIPTION handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 60 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 70 45 6 3 6 0.5 15 +150 150 +150 V V V A A A W °C °C °C UNIT 1999 Apr 12 2 Philips Semiconductors Product specification NPN power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Refer to TO-126; SOT32 standard mounting conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBEsat fT PARAMETER collector cut-off current emitter cut-...