BD134

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 13 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W BD134 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD134 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB=0 -45 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A -0.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -2V -1.3 V ICBO Collector Cutoff Current VCB= -45V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 mA hFE-1 DC Current Gain IC= -150mA ; VCE= -2V 40 250 hFE-2 DC Current Gain IC= -0.5...