BD136G, BD138G, BD140G
Plastic Medium-Power Silicon PNP Transistors
This series of plastic, medium−power silicon PNP tr...
BD136G, BD138G, BD140G
Plastic Medium-Power Silicon PNP Transistors
This series of plastic, medium−power silicon PNP transistors are designed for use as audio
amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features
High DC Current Gain BD 136, 138, 140 are complementary with BD 135, 137, 139 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter
Voltage BD136G BD138G BD140G
VCEO
Vdc
45
60
80
Collector−Base
Voltage BD136G BD138G BD140G
VCBO
Vdc
45
60
100
Emitter−Base
Voltage
Collector Current
Base Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC IB PD
5.0
Vdc
1.5
Adc
0.5
Adc
1.25
Watts
10
mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
12.5
Watts
100
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case
RqJC
10
Thermal Resistance, Junction−to−Ambient RqJA
100
Unit °C/W °C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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