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BD190 Datasheet

Part Number BD190
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BD190 DatasheetBD190 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·High current ·Complement to type BD189 APPLICATIONS ·For use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD190 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltag.

  BD190   BD190






Part Number BD190
Manufacturers Motorola Inc
Logo Motorola  Inc
Description PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR
Datasheet BD190 DatasheetBD190 Datasheet (PDF)

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  BD190   BD190







Part Number BD190
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BD190 DatasheetBD190 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) ·Complement to type BD189 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5 to10 Watt audio amplifiers utilizing complementary or ruais complementary circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collec.

  BD190   BD190







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·High current ·Complement to type BD189 APPLICATIONS ·For use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD190 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Base current Total power dissipation Junction temperature Storage temperature Tmb770 Open emitter Open base Open collector CONDITIONS VALUE -70 -60 -5 -4 -2 40 -65~150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance, junction to case VALUE 3.12 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD190 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(SUS)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector-emitter sustaining voltage IC=-0.1A; IB=0 IC=-2.0A; IB=-0.2A IC=-2A ; VCE=-2V VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2A ; VCE=-2V IC=-1.0A; VCE=-10V ;f=1.0MHz -60 V Collector-emitter saturation voltage -1.0 V Base-emitter on voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -1.0 mA DC current gain 40 DC current gain 15 Transition freq.


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