isc Silicon PNP Power Transistor
BD202/204
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- B...
isc Silicon PNP Power Transistor
BD202/204
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204
·Complement to Type BD201/203 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD202
-60
VCBO
Collector-Base
Voltage
V
BD204
-60
BD202
-45
VCEO
Collector-Emitter
Voltage
V
BD204
-60
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak tp≤10ms
-12
A
ICSM
Collector Current-Peak tp≤2ms
-25
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3
A
60
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.08 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown
Voltage
BD202 BD204
V(BR)CBO Collector-Base Breakdown
Voltage
V(BR)EBO Emitter-Base Breakdown
Voltage
VCE(sat)-1 Collector-Emitter Saturation
Voltage
VCE(sat)-2 Collector-Emitter Saturation
Voltage
VBE(sat) Base-Emitter Saturation
Voltage
V...