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BD376 Datasheet

Part Number BD376
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet BD376 DatasheetBD376 Datasheet (PDF)

BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 1 TO-126 2.Collector 3.Base 1. Emitter Value - 50 - 75 - 100 - 45 - 60 - 80 -5 -2 -3 -1 25 150 - 55 ~ 150 Units V V V V V V V A A A W °C °C VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 Emitter-Bas.

  BD376   BD376






Part Number BD376
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BD376 DatasheetBD376 Datasheet (PDF)

isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD376 -50 VCBO Collector-Base Voltage BD378 -75 V BD380 -100 BD376 -45 VCEO Collector-Emitter Voltage BD378 -60 V BD380 -80 VEBO Emitt.

  BD376   BD376







PNP Epitaxial Silicon Transistor

BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 1 TO-126 2.Collector 3.Base 1. Emitter Value - 50 - 75 - 100 - 45 - 60 - 80 -5 -2 -3 -1 25 150 - 55 ~ 150 Units V V V V V V V A A A W °C °C VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD376 : BD378 : BD380 Collector-Base Breakdown Voltage Collector Cut-off Current : BD376 : BD378 : BD380 : BD376 : BD378 : BD380 Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 50 - 75 - 100 -2 -2 -2 - 100 40 20 375 -1 - 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V µA µA µA µA BVCBO IC = - 100µA, IE = 0 ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.15A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 0.1A VCE = - 2V, IC = -1A VCC = - 30V, IC = - 0.5A IB1 = - IB2 = - 0.05A RL = 60Ω IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage .


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