BD379

BD375/377/379 BD375/377/379 Medium Power Linear and Switching Applications Complement to BD376, BD378 and BD380 respectively NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379 1 TO-126 2.Collector 3.Base 1. Emitter Value 50 75 100 45 60 80 5 2 3 1 25 150 - 55 ~ 150 Units V V V V V V V A A A W °C °C VCEO Collector-Emitter Voltage : BD375 : BD377 : BD379 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD375 : BD377 : BD379 Collector-Base Breakdown Voltage Collector Cut-off Current : BD375 : BD377 : BD379 : BD375 : BD377 : BD379 Test Condition IC = 100mA, IB = 0 Min. 45 60 80 50 75 100 2 2 2 100 40 20 375 1 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V µA µA µA µA BVCBO IC = 100µA, IE = 0 ICBO VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.15A VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCC = 30V, IC = 0.5A IB1 = - IB2 = 0.05A RL = 60Ω IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Turn ON Time Turn OFF Time * Pulse Test: PW=350µs, duty Cycle=2%...