BD533/5/7 BD534/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
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BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREF...
BD533/5/7 BD534/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
s
BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. TO-220
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CES V CEO V EBO I C, I E IB P t ot T stg Tj Collector-Base
Voltage (IE = 0) Collector-Emitter
Voltage (V BE = 0) Collector-Emitter
Voltage (I B = 0) Emitter-Base
Voltage (I C = 0) Collector and Emitter Current Base Current Total Dissipation at T c ≤ 25 C
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Value BD533 BD534 45 45 45 BD535 BD536 60 60 60 5 8 1 50 -65 to 150 150 BD537 BD538 80 80 80
Uni t
V V V V A A W
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Storage Temperature Max. O perating Junction Temperature
C C
For PNP types
voltage and current values are negative.
June 1997
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BD533/BD534/BD535/BD536/BD537/BD538
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.5 70
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C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s for BD533/534 for BD535/536 for BD537/538 for BD533/534 for BD535/536 for BD537/538 V EB = 5 V I...