BD539

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Complement to Type BD540 APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2 W 45 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W BD539 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICEO Collector Cutoff Current VCB= 30V; IB= 0 ICES Collector Cutoff Current VCE= 40V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain ...