DatasheetsPDF.com

BD544B Datasheet

Part Number BD544B
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistors
Datasheet BD544B DatasheetBD544B Datasheet (PDF)

isc Silicon PNP Power Transistors BD544/A/B/C DESCRIPTION ·70 W at 25°C Case Temperature ·Complement to Type BD543/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD544 -40 BD544A -60 VCBO Collector-Base Voltage V BD544B -80 BD544C -100 BD544 -40 VCEO Collector-Emitter Volt.

  BD544B   BD544B






Part Number BD544B
Manufacturers BOURNS
Logo BOURNS
Description PNP SILICON POWER TRANSISTORS
Datasheet BD544B DatasheetBD544B Datasheet (PDF)

BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB.

  BD544B   BD544B







Part Number BD544B
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet BD544B DatasheetBD544B Datasheet (PDF)

BD544 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package.  / Features ,, BD543 。 High IC, high PC, complement to BD543.  / Applications 。 Medium power amplifier applications.  / Equivalent Circuit / Pinning 12 3 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/7 BD544 Rev.F Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter .

  BD544B   BD544B







Part Number BD544B
Manufacturers TRSYS
Logo TRSYS
Description PNP SILICON POWER TRANSISTORS
Datasheet BD544B DatasheetBD544B Datasheet (PDF)

.

  BD544B   BD544B







Part Number BD544B
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description PNP SILICON POWER TRANSISTORS
Datasheet BD544B DatasheetBD544B Datasheet (PDF)

BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD543 Series 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E q q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless o.

  BD544B   BD544B







Silicon PNP Power Transistors

isc Silicon PNP Power Transistors BD544/A/B/C DESCRIPTION ·70 W at 25°C Case Temperature ·Complement to Type BD543/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD544 -40 BD544A -60 VCBO Collector-Base Voltage V BD544B -80 BD544C -100 BD544 -40 VCEO Collector-Emitter Voltage BD544A -60 V BD544B -80 BD544C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -10 A 70 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.79 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Collector-Emitter Breakdown Voltage BD544A BD544B IC= -30mA ; IB= 0 -60 -80 V BD544C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A -0.5 V VCE(sat).


2017-08-23 : MT28GU256AAA2EGC-0SIT    DS2501-UNW    EU-KS0066    SI-B8T08128001    SI-B8R08128001    T400XW01-V0    DS2502    R-78A15-0.5SMD    R-78A9.0-0.5SMD    R-78A12-0.5SMD   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)