isc Silicon NPN Power Transistor
BD545/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Breakdown Volt...
isc Silicon NPN Power Transistor
BD545/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C
·Complement to Type BD546/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD545
40
BD545A
60
VCBO
Collector-Base
Voltage
V
BD545B
80
BD545C
100
BD545
40
VCEO
Collector-Emitter
Voltage
BD545A
60
V
BD545B
80
BD545C
100
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
15
A
3.5 W
85
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.47 ℃/W
Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BD545/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD545
40
V(BR)CEO
Collector-Emitter Breakdown
Voltage
BD545A BD545B
IC= 30mA ;IB=0
60 80
V
BD545C
100
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 5A; IB= 0.625A
0.8
V
VCE(sat)-2 Collector-Emit...