BD550B

isc Silicon NPN Power Transistors DESCRIPTION High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 275 V 275 V 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ BD550B · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A VBE(on) Base-Emitter On Voltage ICER Collector Cutoff Current IC= 2A ; VCE= 4V VCE= 250V; RBE= 100Ω ICEO Collector Cutoff Current VCE= 200V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2A ; VCE= 4V fT Current Gain-Bandwidth Product IC= 0.2A ; VCE= 10V BD550B MIN TYP. MAX UNIT 250 V 2 V 2 V 1 mA 5 mA 1 mA 10 50 5 MHz NOTICE： ISC reserves the rights t...