BD647

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD645/647/649/651 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD645 VCBO Collector-base voltage BD647 BD649 BD651 BD645 VCEO Collector-emitter voltage BD647 BD649 BD651 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 150 -65~150 V A A mA W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD645 Collector-emitter breakdown voltage BD647 IC=30mA, IB=0 BD649 BD651 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD645 BD647 ICBO Collector cut-off current BD649 BD651 BD645 BD647 ICEO Collector cut-off current BD649 BD651 IEBO hFE Emitter cut-off current DC current gain VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=3A ,IB=12mA IC=5A ,IB=50mA IC=5A ,IB=50mA IC=3A ;...