BD652

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD646/648/650/652 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD646 VCBO Collector-base voltage BD648 BD650 BD652 BD646 VCEO Collector-emitter voltage BD648 BD650 BD652 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -140 -60 -80 -100 -120 -5 -8 -12 -150 62.5 150 -65~150 V A A mA W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD646 Collector-emitter breakdown voltage BD648 IC=-30mA, IB=0 BD650 BD652 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD646 BD648 ICBO Collector cut-off current BD650 BD652 BD646 BD648 ICEO Collector cut-off current BD650 BD652 IEBO hFE Emitter cut-off current DC current gain VCE=-50V, IB=0 VCE=-60V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IC=-3A ,IB=-12mA IC=-5A ,IB=-50mA ...