BD675A

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features High DC Current Gain Monolithic Construction Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G VCEO Vdc 45 60 80 100 Collector−Base Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G VCBO Vdc 45 60 80 100 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEBO IC IB PD 5.0 4.0 1.0 40 0.32 Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 3.13 Unit °C/W http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS, 40 WATTS COLLECTOR 2, 4 BASE 3 EMITTER 1 123 TO−225 CASE 77−09 STYLE 1 MARKING DIAGRAM...