| Part Number | BD733 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min.) ·Complement to Type BD734 ·Minimum Lot-t... |
| Features |
or-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 1V
ICES
Collector Cutoff... |
| Datasheet | BD733 pdf datasheet |
| Part Number | BD738 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) ·Complement to Type BD737 ·Minimum Lot. |
| Features |
Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -1V
ICES
C. |
| Datasheet | BD738 pdf datasheet |
| Part Number | BD737 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Complement to Type BD738 ·Minimum Lot-t. |
| Features |
or-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 1V
ICES
Collector Cutoff. |
| Datasheet | BD737 pdf datasheet |
| Part Number | BD736 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min.) ·Complement to Type BD735 ·Minimum Lot. |
| Features |
Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -1V
ICES
C. |
| Datasheet | BD736 pdf datasheet |
| Part Number | BD735 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min.) ·Complement to Type BD736 ·Minimum Lot-t. |
| Features |
ector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 1V
ICES
Collector Cut. |
| Datasheet | BD735 pdf datasheet |
| Part Number | BD734 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -25V(Min.) ·Complement to Type BD733 ·Minimum Lot. |
| Features |
Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -1V
ICES
C. |
| Datasheet | BD734 pdf datasheet |
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