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BD898 Datasheet

Part Number BD898
Manufacturers Bourns Electronic Solutions
Logo Bourns Electronic Solutions
Description PNP Transistor
Datasheet BD898 DatasheetBD898 Datasheet (PDF)

www.DataSheet4U.com BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD896 Collector-base voltage (IE = 0) BD898 BD900 BD902 BD896 Colle.

  BD898   BD898






Part Number BD898
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description Silicon PNP Power Transistors
Datasheet BD898 DatasheetBD898 Datasheet (PDF)

SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD895 - BD897 - BD899 - BD901 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 B.

  BD898   BD898







Part Number BD898
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BD898 DatasheetBD898 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor BD898 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD897 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

  BD898   BD898







PNP Transistor

www.DataSheet4U.com BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD896 Collector-base voltage (IE = 0) BD898 BD900 BD902 BD896 Collector-emitter voltage (IB = 0) BD898 BD900 BD902 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating free-air temperature range Operating junction temperature range Storage temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TA Tj Tstg VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARA.


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