isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Hi...
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= -4A ·Collector Power Dissipation-
: PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD897A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base
Voltage
-60
VCEO
Collector-Emitter
Voltage
-60
VEBO
Emitter-Base
Voltage
-5
IC
Collector Current-Continuous
-8
IB
Base Current-Continuous
-0.3
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
2 70
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A
W
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.79 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
BD898A
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BD898A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -50mA; IB= 0
-60
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= -4A; IB= -16mA
-2.8
V
VBE(on) Base-Emitter On
Voltage
IC= -4A ; VCE= -3V
-2.5
V
ICBO
Collector ...