isc Silicon PNP Power Transistor
DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage-
: VCEO...
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96
·Complement to Type BDV91/93/95 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general
amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCER
Collector-Emitter
Voltage
BDV92 BDV94 BDV96
-60 -80 -100
VCEO
Collector-Emitter
Voltage
BDV92 BDV94 BDV96
-60 -80 -100
VEBO
Emitter-Base
Voltage
-7
IC
Collector Current-Continuous
-10
ICM
Collector Current-Peak
-20
IB
Base Current
-7
IE
Emitter Current
-14
PC
Collector Power Dissipation @ TC=25℃
100
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.25 ℃/W
BDV92/94/96
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BDV92/94/96
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDV92
-60
VCEO(SUS)
Collector-Emitter Sustaining
Voltage
BDV94 IC= -30mA ;IB=0
-80
V
BDV96
-100
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= -4A; IB= -0.4A
-1.0 V
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= -10A; IB= -3.3A
-3.0 V
...