isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min)...
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min)@ IC= -2A ·Complement to Type BDW23/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for hammer drivers, audio
amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW24
-45
BDW24A
-60
VCER
Collector-Emitter
Voltage
V
BDW24B
-80
BDW24C
-100
BDW24
-45
BDW24A
-60
VCEO
Collector-Emitter
Voltage
V
BDW24B
-80
BDW24C
-100
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
-8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.2
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
BDW24/A/B/C
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BDW24/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDW24
-45
V(BR)CEO
Collector-Emitter Breakdown
Voltage
BDW24A BDW24B
IC= -50mA ;IB=0
-60 -80
V
BDW24C
-100
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= -2A; IB= -8mA
-2
V
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= -6A; IB= -60mA
-3
V
VBE(sat) Base-Emitter Saturation
Voltage
IC= -2A; IB= -8mA
-2.5
V
VBE(on)-1 Base-Emitter On
Voltage
IC= -1A ; VCE= -3V
-2.5
V
VBE(on)...