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BDW40 TRANSISTORS Datasheet PDF

(BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

(BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

 

 

 

Part Number BDW40
Description (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Manufacture Motorola
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Part Number BDW40
Description NPN Transistor
Feature isc Silicon NPN Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Su staining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain : hFE= 1000(Min ) @IC= 5A ·Low Collector Saturation Vo ltage : VCE(sat)= 2.
0V(Max.
)@ IC= 5.
0A = 3.
0V(Max.
)@ IC= 10A ·Complement to T ype BDW45 ·Minimum Lot-to-Lot variatio ns for robust device performance and re liable operation APPLICATIONS ·Design ed for general purpose and low speed sw itching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V ALUE UNIT VCBO Collector-Base Voltag e 60 V VCEO Collector-Emitter Volta ge 60 V VEBO Emitt .
Manufacture INCHANGE
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