BDW46

isc Silicon PNP Darlington Power Transistor BDW46 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A ·Complement to Type BDW41 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 85 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.47 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDW46 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -4V MIN TYP. MAX UNIT -80 V -2.0 V -3.0 V -3.0 V ICBO Collector Cuto...