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BDW46G Datasheet

Part Number BDW46G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Darlington Complementary Silicon Power Transistors
Datasheet BDW46G DatasheetBDW46G Datasheet (PDF)

BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.

  BDW46G   BDW46G






Part Number BDW46
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BDW46G DatasheetBDW46 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor BDW46 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A ·Complement to Type BDW41 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

  BDW46G   BDW46G







Part Number BDW46
Manufacturers Motorola
Logo Motorola
Description (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet BDW46G DatasheetBDW46 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  BDW46G   BDW46G







Part Number BDW46
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet BDW46G DatasheetBDW46 Datasheet (PDF)

www.DataSheet4U.com BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • • VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 L.

  BDW46G   BDW46G







Darlington Complementary Silicon Power Transistors

BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc • Monolithic Construction with Built−In Base Emitter Shunt resistors • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BDW46 BDW42, BDW47 Collector-Base Voltage BDW46 BDW42, BDW47 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VCEO.


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