BDW47G

BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built−In Base Emitter Shunt resistors TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BDW46 BDW42, BDW47 Collector-Base Voltage BDW46 BDW42, BDW47 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VCEO...