isc Silicon NPN Power Transistor
BDW51/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Vol...
isc Silicon NPN Power Transistor
BDW51/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C
·Complement to Type BDW52/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW51
45
VCBO
Collector-Base
Voltage
BDW51A
60
V
BDW51B
80
BDW51C
100
BDW51
45
VCEO
Collector-Emitter
Voltage
BDW51A
60
V
BDW51B
80
BDW51C
100
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
125
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.4
UNIT ℃/W
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isc Silicon NPN Power Transistor
BDW51/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDW51
CONDITIONS
MIN TYP. MAX UNIT 45
VCEO(SUS)
Collector-Emitter Sustaining
Voltage
BDW51A BDW51B
IC= 30mA; IB= 0
60 80
V
BDW51C
100
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 5A; IB= 0.5A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 10A; IB= 2.5A
3.0
V
VB...