BDW51B

isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C ·Complement to Type BDW52/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW51 45 VCBO Collector-Base Voltage BDW51A 60 V BDW51B 80 BDW51C 100 BDW51 45 VCEO Collector-Emitter Voltage BDW51A 60 V BDW51B 80 BDW51C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 125 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.4 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDW51/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW51 CONDITIONS MIN TYP. MAX UNIT 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW51A BDW51B IC= 30mA; IB= 0 60 80 V BDW51C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A 3.0 V VB...