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BDW53 Datasheet

Part Number BDW53
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BDW53 DatasheetBDW53 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDW53 DESCRIPTION ·High DC Current Gain : hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

  BDW53   BDW53






Part Number BDW53
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN Transistor
Datasheet BDW53 DatasheetBDW53 Datasheet (PDF)

BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D 40 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 4 A Continuous Collector Current Minimum hFE of 750 at 3 V, 1.5 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless ot.

  BDW53   BDW53







NPN Transistor

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDW53 DESCRIPTION ·High DC Current Gain : hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation @TC=25℃ Collector Power Dissipation @Ta=25℃ Junction Temperature Storage Temperature Range 45 V 45 V 5 V 4 A 50 mA 40 W 2 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS INCHANGE Semiconductor BDW53 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 45 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ,IB= 30mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A ,IB= 40mA 4.0 V VBE(on) .


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