isc Silicon NPN Darlington Power Transistor
BDX87/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A ·Co...
isc Silicon NPN Darlington Power Transistor
BDX87/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C
·Complement to Type BDX88/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX87
45
BDX87A
60
VCBO
Collector-Base
Voltage
BDX87B
80
BDX87C 100
BDX87
45
VCEO
Collector-Emitter
Voltage
BDX87A
60
BDX87B
80
BDX87C 100
VEBO
Emitter-Base
Voltage
5
IC
Collector Current-Continuous
12
ICM
Collector Current-Peak
18
IB
Base Current
200
PC
Collector Power Dissipation @ TC=25℃
120
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V A A mA W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.45 ℃/W
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isc Silicon NPN Darlington Power Transistor
BDX87/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX87
VCEO(SUS)
Collector-Emitter Sustaining
Voltage
BDX87A BDX87B
IC= 50mA; IB= 0
BDX87C
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 6A; IB= 24mA
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 12A; IB= 120mA
VBE(sat) Base-Emitter...