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BF1005S Datasheet

Part Number BF1005S
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon N-Channel MOSFET Tetrode
Datasheet BF1005S DatasheetBF1005S Datasheet (PDF)

BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1665 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1005S NZs Maximum Ratings Parameter Drain-source voltage Symbol Value 8 25 10 3 200 - 55 ...+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continu.

  BF1005S   BF1005S






Part Number BF1005S
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Silicon N-Channel MOSFET Tetrode
Datasheet BF1005S DatasheetBF1005S Datasheet (PDF)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005S... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF1005S SOT143 1=S 2=D 3=G2 4=G1 - - BF1005SR SOT143R 1=D 2=S 3=G1 4=G2 - - Marking NZs NZs Maximum Ratin.

  BF1005S   BF1005S







Silicon N-Channel MOSFET Tetrode

BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1665 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1005S NZs Maximum Ratings Parameter Drain-source voltage Symbol Value 8 25 10 3 200 - 55 ...+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -25-1998 BF 1005S Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 13 50 800 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 - V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current µA nA µA mA V VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current ±VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSO VG2S(p) VDS = 5.


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