BF1009S

BF1009S... Silicon N_Channel MOSFET Tetrode For low noise, high gain controlled input stage up to 1 GHz Operating voltage 9 V Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 ... 150 150 Marking JLs JLs Unit V mA V mW Symbol VDS ID ±IG1/2SM +VG1SE Ptot Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1009S, BF1009SR TS ≤ 94 °C, BF1009W Storage temperature Channel temperature °C Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 Feb-18-2004 BF1009S... Thermal Resistance Parameter Channel - soldering point 1) BF1009S, BF1009SR BF1009SW Symbol Rthchs ≤ 370 ≤ 280 Value Unit K/W Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V Operating current (selfbiased) VDS = 9 V, VG2S = 6 V Gate2-source pinch-off voltage VDS = ...