BF1009S...
Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating vo...
BF1009S...
Silicon N_Channel
MOSFET Tetrode For low noise, high gain controlled input stage up to 1 GHz Operating
voltage 9 V Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF1009S BF1009SR
Maximum Ratings Parameter
Package SOT143 SOT143R 1=S 1=D 2=D 2=S
Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 ... 150 150
Marking JLs JLs
Unit V mA V mW
Symbol VDS ID ±IG1/2SM +VG1SE Ptot
Drain-source
voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1009S, BF1009SR TS ≤ 94 °C, BF1009W Storage temperature Channel temperature
°C
Note: It is not recommended to apply external DC-
voltage on Gate 1 in active mode.
1 Feb-18-2004
BF1009S...
Thermal Resistance Parameter Channel - soldering point 1) BF1009S, BF1009SR BF1009SW Symbol
Rthchs ≤ 370 ≤ 280
Value
Unit K/W
Electrical Characteristics Parameter DC Characteristics Drain-source breakdown
voltage ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown
voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown
voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V Operating current (selfbiased) VDS = 9 V, VG2S = 6 V Gate2-source pinch-off
voltage VDS = ...